Discover what the Semiconductor Detector Processing Lab has to offer.
Wet & Reactive Ion Etching
Wet-etching hood for oxide polisilicon aluminum etching and standard RCA cleaning and Reactive Ion Etching i.e. dry etch of oxide nitride and photoresist. Oxidation and annealing furnaces are used for clean silicon processes.
Front/Back Lithography with patterns down to 1 um and alignment capabilities to 0.5 um. Fabrication is preceded by TCAD simulations and wafer layout design.
Metallization & Passivation
Metallization by RF sputtering of aluminum/1Silicon titanium silicon oxide and through the evaporation of several metals in a separate cleanroom. Passivation of polymide or PECVD oxide.
Rapid Thermal Processing
Including rapid thermal anneal for sintering of silicon-aluminum contacts.