The Center for Integrated Nanotechnologies (CINT) is an Office of Science national user facility that allows external users to perform research using Basic Energy Sciences (BES) supported facilities. The center provides cutting-edge nanoscale and nanotechnology capabilities to the research community. Users receive access to clean rooms, laser labs, state-of-the-art equipment, etc. The major research areas of the facility are Quantum Materials Systems; Nanophotonics and Optical Nanomaterials; In-Situ Characterization and Nanomechanics; and Soft, Biological, and Composite Nanomaterials. CINT provides open access to tools and expertise needed to explore the continuum from scientific discovery to the integration of nanostructures into the micro- and macro world. CINT is an equal partnership between Sandia National Laboratories and Los Alamos National Laboratory.
Nanoscale integration of materials and quantum structures enables unique capabilities for QIS research. CINT has strategically invested in developing world-leading capabilities in the synthesis, fabrication, characterization, and modeling of materials and devices for quantum information systems. CINT’s synthesis capabilities range from the growth of 2D materials to the growth of 4” ultrahigh-mobility GaAs thin films. CINT has also developed numerous qubit and quantum structures ranging from functionalized carbon nanotubes to integrated single electron qubits in Si. Single donors and color centers provide some of the most attractive quantum systems for solid state materials such as diamond, and CINT offers ion implantation capabilities for creating electrically and optically accessible defect sites. CINT is developing techniques to fabricate color centers in diamond to probe nanomaterials with nuclear magnetic resonance at length scales previously not available. We are also investigating new ways to create controllable defects sites in 2D materials. In addition, CINT offers its users a suite of world-leading optical and electrical characterization capabilities specifically designed to study qubits. CINT capabilities are backed by extensive modeling experience in light-matter interactions, many-body quantum interactions, topological materials, and performance of quantum systems. CINT is also exploring self-assembly and soft nanolithography approaches for integrating soft quantum materials into photonic/plasmonic cavities to develop quantum light sources and quantum-controlled devices.
CINT's impacts include:
Has the structure and mission to collaborate widely across academia, industry, and within DOE labs:
- National Renewable Energy Laboratory – Interplay of co-polymer wrapping and sp3 functionalization in semiconducting carbon nanotubes for applications in on-chip quantum light sources.
- NIST – Atomic precision tunnel junctions for quantum computing.
- McGill University – Novel fabrication of high mobility GaAs heterostructures to create nanostructures without degrading devices by exposing them to electron beam lithography.
- Harvard University – Fabrication of Si-vacancy implanted diamond devices.
- University of Chicago and Argonne National Laboratory – Nanoscale implant of spin qubits in silicon carbide.
Helps the international research community perform cutting-edge research in the areas of nanoscience and nanotechnology:
- Ecole Normale Supérieure de Cachan – CINT user project based on the development of Carbon Nanotube Single Photon Source, Christoph Voisin.
- University of Tokyo – Integration of carbon nanotube dopant emitters with silicon microcavities.
- Karlsruhe Institute of Technology – Electrically-driven, single photon sources based on carbon nanotubes.
Promotes proprietary research which can be conducted in accordance with Federal regulations for full-cost recovery.